JUAN BAUTISTA
ROLDÁN ARANDA
CATEDRÁTICO DE UNIVERSIDAD
Jorge Francisco
Suñe Tarruella
Publicacions en què col·labora amb Jorge Francisco Suñe Tarruella (12)
2024
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Hardware implementation of memristor-based artificial neural networks
Nature Communications, Vol. 15, Núm. 1
2021
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On the thermal models for resistive random access memory circuit simulation
Nanomaterials, Vol. 11, Núm. 5
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Standards for the Characterization of Endurance in Resistive Switching Devices
ACS Nano, Vol. 15, Núm. 11, pp. 17214-17231
2019
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Recommended Methods to Study Resistive Switching Devices
Advanced Electronic Materials, Vol. 5, Núm. 1
2018
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An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach
Journal of Applied Physics, Vol. 123, Núm. 15
2017
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Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices
IEEE Transactions on Electron Devices, Vol. 64, Núm. 8, pp. 3159-3166
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SIM2RRAM : a physical model for RRAM devices simulation
Journal of Computational Electronics, Vol. 16, Núm. 4, pp. 1095-1120
2016
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A new compact model for bipolar RRAMs based on truncated-cone conductive filaments - A Verilog-A approach
Semiconductor Science and Technology, Vol. 31, Núm. 11
2015
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An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs
Solid-State Electronics, Vol. 111, pp. 47-51
2014
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A comprehensive analysis on progressive reset transitions in RRAMs
Journal of Physics D: Applied Physics, Vol. 47, Núm. 20
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Simulation of thermal reset transitions in resistive switching memories including quantum effects
Journal of Applied Physics, Vol. 115, Núm. 21
2013
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An in-depth simulation study of thermal reset transitions in resistive switching memories
Journal of Applied Physics, Vol. 114, Núm. 14