JUAN BAUTISTA
ROLDÁN ARANDA
CATEDRÁTICO DE UNIVERSIDAD
Interuniversity Microelectronics Centre
Lovaina, BélgicaPublicaciones en colaboración con investigadores/as de Interuniversity Microelectronics Centre (7)
2022
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Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching
Advanced Electronic Materials, Vol. 8, Núm. 8
2021
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Advanced Data Encryption using 2D Materials
Advanced Materials, Vol. 33, Núm. 27
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Standards for the Characterization of Endurance in Resistive Switching Devices
ACS Nano, Vol. 15, Núm. 11, pp. 17214-17231
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Time series modeling of the cycle-to-cycle variability in h-BN based memristors
IEEE International Reliability Physics Symposium Proceedings
2020
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Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks
IEEE International Reliability Physics Symposium Proceedings
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Reversible dielectric breakdown in h-BN stacks: A statistical study of the switching voltages
IEEE International Reliability Physics Symposium Proceedings
2019
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Recommended Methods to Study Resistive Switching Devices
Advanced Electronic Materials, Vol. 5, Núm. 1