Publicaciones en las que colabora con ANDRÉS GODOY MEDINA (23)

2021

  1. Memcapacitor and meminductor circuit emulators: A review

    Electronics (Switzerland), Vol. 10, Núm. 11

  2. Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications

    Nano Express, Vol. 2, Núm. 3

2020

  1. Resistive Switching in Graphene Oxide

    Frontiers in Materials, Vol. 7

2019

  1. Assessment of three electrolyte-molecule electrostatic interaction models for 2D material based BioFETs

    Nanoscale Advances, Vol. 1, Núm. 3, pp. 1077-1085

  2. Determination of the optical properties in transparent conductive electrodes based on an indium-tin oxide coating using the IAD method

    Proceedings of SPIE - The International Society for Optical Engineering

  3. Inexpensive graphene oxide heaters lithographed by laser

    Nanomaterials, Vol. 9, Núm. 9

  4. Laser-Fabricated reduced graphene oxide memristors

    Nanomaterials, Vol. 9, Núm. 6

  5. Memcapacitor emulator based on the Miller effect

    International Journal of Circuit Theory and Applications, Vol. 47, Núm. 4, pp. 572-579

  6. Resistive switching and charge transport in laser-fabricated graphene oxide memristors: A time series and quantum point contact modeling approach

    Materials, Vol. 12, Núm. 22

2018

  1. In-depth study of laser diode ablation of Kapton polyimide for flexible conductive substrates

    Nanomaterials, Vol. 8, Núm. 7

2011

  1. Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond

    Solid-State Electronics, Vol. 65-66, Núm. 1, pp. 88-93

  2. Ultrathin n-Channel and p-Channel SOI MOSFETs

    Engineering Materials (Springer Science and Business Media B.V.), pp. 169-185

2010

  1. An analytical I-V model for surrounding-gate transistors that includes quantum and velocity overshoot effects

    IEEE Transactions on Electron Devices, Vol. 57, Núm. 11, pp. 2925-2933

  2. Multi-Subband Monte Carlo simulation of bulk MOSFETs for the 32nm-node and beyond

    2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

2009

  1. Hole mobility in ultrathin double-gate soi devices: The effect of acoustic phonon confinement

    IEEE Electron Device Letters, Vol. 30, Núm. 12, pp. 1338-1340

  2. Monte Carlo simulation of nanoelectronic devices

    Journal of Computational Electronics, Vol. 8, Núm. 3-4, pp. 174-191

  3. Non-metallic effects in silicided gate MOSFETs

    Solid-State Electronics, Vol. 53, Núm. 12, pp. 1313-1317

  4. Quantization effects in silicided and metal gate MOSFETs

    Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

  5. Simulation of hole mobility in DGSOI transistors

    ECS Transactions

  6. The effect of surface roughness scattering on hole mobility in double gate silicon-on-insulator devices

    Journal of Applied Physics, Vol. 106, Núm. 2