PEDRO
CARTUJO ESTÉBANEZ
Researcher in the period 2008-2009
Atilà
Herms Berenguer
Publications by the researcher in collaboration with Atilà Herms Berenguer (5)
1986
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Analysis of the edge region photocapacitance at constant bias in Te-doped Al0.55Ga0.45As
Solid State Electronics, Vol. 29, Núm. 7, pp. 759-766
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Dependence of the optical cross section of interface states on the photon energy at Si-SiO2 structures
Surface Science, Vol. 168, Núm. 1-3, pp. 665-671
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Majority-carrier capture cross-section determination in the large deep-trap concentration cases
Journal of Applied Physics, Vol. 59, Núm. 5, pp. 1562-1569
1982
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Dependence of the electron cross section for the acceptor gold level in silicon on the gold to donor ratio
Applied Physics Letters, Vol. 41, Núm. 7, pp. 656-658
1981
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Interpretación de la captura de electrones por efecto multifonón en el nivel B del GaAs
III Reunión Grupo Especializado de Electricidad y Magnetismo de la RSEF: comunicaciones, noviembre 1981