Publicaciones en colaboración con investigadores/as de Universitat Autònoma de Barcelona (433)

2024

  1. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

    Materials Science in Semiconductor Processing, Vol. 169

  2. Hardware implementation of memristor-based artificial neural networks

    Nature Communications, Vol. 15, Núm. 1

  3. Hysteresis in memristors produces conduction inductance and conduction capacitance effects

    Physical Chemistry Chemical Physics

2023

  1. Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 11, pp. 5977-5982

  2. Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

    Journal of Physics D: Applied Physics, Vol. 56, Núm. 36

  3. Exploiting Ambipolarity in Graphene Field-Effect Transistors for Novel Designs on High-Frequency Analog Electronics

    Small, Vol. 19, Núm. 49

  4. Graphene field-effect transistor TCAD tool for circuit design under freeware

    Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023

  5. Reconfigurable frequency multipliers based on graphene field-effect transistors

    Discover Nano, Vol. 18, Núm. 1

  6. Variability in Resistive Memories

    Advanced Intelligent Systems, Vol. 5, Núm. 6

2022

  1. Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field-Effect Transistors

    Advanced Materials, Vol. 34, Núm. 48

  2. Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

    Solid-State Electronics, Vol. 194

2021

  1. Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 11, pp. 5916-5919

  2. Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories

    Journal of Applied Physics, Vol. 130, Núm. 5

  3. Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  4. Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

    Nanoscale Advances, Vol. 3, Núm. 8, pp. 2377-2382

  5. On the thermal models for resistive random access memory circuit simulation

    Nanomaterials, Vol. 11, Núm. 5

  6. Sensitivity analysis of a Graphene Field-Effect Transistors by means of Design of Experiments

    Mathematics and Computers in Simulation, Vol. 183, pp. 187-197

  7. Standards for the Characterization of Endurance in Resistive Switching Devices

    ACS Nano, Vol. 15, Núm. 11, pp. 17214-17231

  8. Tolerance analysis of a GFET transistor for aerospace and aeronautical application

    IOP Conference Series: Materials Science and Engineering

  9. Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications

    Nano Express, Vol. 2, Núm. 3