Artículos (14) Publicaciones en las que ha participado algún/a investigador/a

1998

  1. A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 10, pp. 2249-2251

  2. A β-SiC MOSFET Monte Carlo simulator including inversion layer quantization

    VLSI Design, Vol. 8, Núm. 1-4, pp. 257-260

  3. An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 4, pp. 993-995

  4. Development of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFETs

    VLSI Design, Vol. 8, Núm. 1-4, pp. 261-264

  5. Electron mobility in quantized β-SiC inversion layers

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, Núm. 3, pp. 1631-1633

  6. Energy dependence of the effective mass in the envelope-function approximation

    Physica B: Condensed Matter, Vol. 253, Núm. 3-4, pp. 242-249

  7. I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperature

    Journal De Physique. IV : JP, Vol. 8, Núm. 3

  8. Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs

    Journal De Physique. IV : JP, Vol. 8, Núm. 3

  9. Monte Carlo simulation of a submicron MOSFET including inversion layer quantization

    VLSI Design, Vol. 6, Núm. 1-4, pp. 287-290

  10. Monte Carlo simulation of non-local transport effects in strained Si on relaxed Si1-xGex heterostructures

    VLSI Design, Vol. 8, Núm. 1-4, pp. 253-256

  11. Monte carlo simulation of electron transport properties in extremely thin SOI MOSFET's

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 5, pp. 1122-1126

  12. Phonon-limited electron mobility in ultrathin silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 83, Núm. 9, pp. 4802-4806

  13. Pipelined RNS multipliers: An application to scaling

    Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems, Vol. 3, pp. 55-58

  14. Two-dimensional drift-diffusion simulation of superficial strained-Si/Si1-xGex channel metal-oxide-semiconductor field-effect transistors

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, Núm. 3, pp. 1538-1540