Fachbereich
ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
Artikel (14) Publikationen, an denen Forscher/innen teilgenommen haben
1998
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A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot
IEEE Transactions on Electron Devices, Vol. 45, Núm. 10, pp. 2249-2251
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A β-SiC MOSFET Monte Carlo simulator including inversion layer quantization
VLSI Design, Vol. 8, Núm. 1-4, pp. 257-260
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An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs
IEEE Transactions on Electron Devices, Vol. 45, Núm. 4, pp. 993-995
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Development of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFETs
VLSI Design, Vol. 8, Núm. 1-4, pp. 261-264
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Electron mobility in quantized β-SiC inversion layers
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, Núm. 3, pp. 1631-1633
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Energy dependence of the effective mass in the envelope-function approximation
Physica B: Condensed Matter, Vol. 253, Núm. 3-4, pp. 242-249
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I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperature
Journal De Physique. IV : JP, Vol. 8, Núm. 3
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Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs
Journal De Physique. IV : JP, Vol. 8, Núm. 3
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Monte Carlo simulation of a submicron MOSFET including inversion layer quantization
VLSI Design, Vol. 6, Núm. 1-4, pp. 287-290
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Monte Carlo simulation of non-local transport effects in strained Si on relaxed Si1-xGex heterostructures
VLSI Design, Vol. 8, Núm. 1-4, pp. 253-256
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Monte carlo simulation of electron transport properties in extremely thin SOI MOSFET's
IEEE Transactions on Electron Devices, Vol. 45, Núm. 5, pp. 1122-1126
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Phonon-limited electron mobility in ultrathin silicon-on-insulator inversion layers
Journal of Applied Physics, Vol. 83, Núm. 9, pp. 4802-4806
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Pipelined RNS multipliers: An application to scaling
Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems, Vol. 3, pp. 55-58
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Two-dimensional drift-diffusion simulation of superficial strained-Si/Si1-xGex channel metal-oxide-semiconductor field-effect transistors
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, Núm. 3, pp. 1538-1540