FACULTAD DE CIENCIAS DE LA SALUD DE MELILLA
FACULTAD
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STMicroelectronics
Ginebra, SuizaSTMicroelectronics-ko ikertzaileekin lankidetzan egindako argitalpenak (8)
2019
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3-D TCAD Study of the implications of channel width and interface states on FD-SOI Z2-FETs
IEEE Transactions on Electron Devices, Vol. 66, Núm. 6, pp. 2513-2519
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Capacitorless memory devices using virtual junctions
19th International Workshop on Junction Technology, IWJT 2019
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Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells
Solid-State Electronics, Vol. 159, pp. 12-18
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On the Low-Frequency Noise Characterization of Z2-FET Devices
IEEE Access, Vol. 7, pp. 42551-42556
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Reliability study of thin-oxide zero-ionization, zero-swing FET 1T-DRAM memory cell
IEEE Electron Device Letters, Vol. 40, Núm. 7, pp. 1084-1087
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Temperature and Gate Leakage Influence on the Z2-FET Memory Operation
European Solid-State Device Research Conference
2018
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Evaluation of thin-oxide Z2-FET DRAM cell
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
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Experimental Demonstration of Operational Z2-FET Memory Matrix
IEEE Electron Device Letters, Vol. 39, Núm. 5, pp. 660-663