An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs

  1. Roldan, J.B.
  2. Gamiz, F.
  3. Lopez-Villanueva, J.A.
  4. Carceller, J.E.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 1998

Volume: 45

Issue: 4

Pages: 993-995

Type: Article

DOI: 10.1109/16.662819 GOOGLE SCHOLAR
Data source: Scopus