An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs
ISSN: 0018-9383
Année de publication: 1998
Volumen: 45
Número: 4
Pages: 993-995
Type: Article
ISSN: 0018-9383
Année de publication: 1998
Volumen: 45
Número: 4
Pages: 993-995
Type: Article