A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

  1. Roldân, J.B.
  2. Gâmiz, F.
  3. Lopez-Villanueva, J.A.
  4. Cartujo, P.
  5. Carceller, J.E.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 1998

Volume: 45

Issue: 10

Pages: 2249-2251

Type: Article

DOI: 10.1109/16.725262 GOOGLE SCHOLAR
Data source: Scopus