A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

  1. Roldân, J.B.
  2. Gâmiz, F.
  3. Lopez-Villanueva, J.A.
  4. Cartujo, P.
  5. Carceller, J.E.
Aldizkaria:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Argitalpen urtea: 1998

Alea: 45

Zenbakia: 10

Orrialdeak: 2249-2251

Mota: Artikulua

DOI: 10.1109/16.725262 GOOGLE SCHOLAR
Datuen iturria: Scopus