Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors

  1. Godoy, A.
  2. Gámiz, F.
  3. Palma, A.
  4. Jiménez-Tejada, J.A.
  5. Carceller, J.E.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 1997

Volumen: 70

Número: 16

Pages: 2153-2155

Type: Article

DOI: 10.1063/1.118943 GOOGLE SCHOLAR

Objectifs de Développement Durable