A model of the gate capacitance of surrounding gate transistors: Comparison with double-gate MOSFETs

  1. Ruiz, F.J.G.
  2. Tienda-Luna, I.M.
  3. Godoy, A.
  4. Donetti, L.
  5. Gámiz, F.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 2010

Volume: 57

Issue: 10

Pages: 2477-2483

Type: Article

DOI: 10.1109/TED.2010.2058630 GOOGLE SCHOLAR
Data source: Scopus