A model of the gate capacitance of surrounding gate transistors: Comparison with double-gate MOSFETs
ISSN: 0018-9383
Année de publication: 2010
Volumen: 57
Número: 10
Pages: 2477-2483
Type: Article
ISSN: 0018-9383
Année de publication: 2010
Volumen: 57
Número: 10
Pages: 2477-2483
Type: Article