Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

  1. Roldán, J.B.
  2. Gámiz, F.
  3. López-Villanueva, J.A.
  4. Cartujo-Cassinello, P.
Journal:
IEEE Electron Device Letters

ISSN: 0741-3106

Year of publication: 2000

Volume: 21

Issue: 5

Pages: 239-241

Type: Article

DOI: 10.1109/55.841308 GOOGLE SCHOLAR
Data source: Scopus