Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

  1. Roldán, J.B.
  2. Gámiz, F.
  3. López-Villanueva, J.A.
  4. Cartujo-Cassinello, P.
Aldizkaria:
IEEE Electron Device Letters

ISSN: 0741-3106

Argitalpen urtea: 2000

Alea: 21

Zenbakia: 5

Orrialdeak: 239-241

Mota: Artikulua

DOI: 10.1109/55.841308 GOOGLE SCHOLAR
Datuen iturria: Scopus