Two-dimensional drift-diffusion simulation of superficial strained-Si/Si1-xGex channel metal-oxide-semiconductor field-effect transistors

  1. Roldán, J.B.
  2. Gámiz, F.
  3. López-Villanueva, J.A.
  4. Cartujo, P.
Journal:
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

ISSN: 1071-1023

Year of publication: 1998

Volume: 16

Issue: 3

Pages: 1538-1540

Type: Article

DOI: 10.1116/1.589935 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus