Coulomb scattering in strained-silicon inversion layers on Si1-xGex substrates
ISSN: 0003-6951
Année de publication: 1996
Volumen: 69
Número: 6
Pages: 797-799
Type: Article
ISSN: 0003-6951
Année de publication: 1996
Volumen: 69
Número: 6
Pages: 797-799
Type: Article