Publicacions en col·laboració amb investigadors/es de Soochow University (12)

2023

  1. Hybrid 2D–CMOS microchips for memristive applications

    Nature, Vol. 618, Núm. 7963, pp. 57-62

  2. Modeling the Variability of Au/Ti/h-BN/Au Memristive Devices

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 4, pp. 1533-1539

2022

  1. Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller

    Nanoscale, Vol. 15, Núm. 5, pp. 2171-2180

  2. Spiking neural networks based on two-dimensional materials

    npj 2D Materials and Applications, Vol. 6, Núm. 1

2021

  1. Advanced Data Encryption ​using 2D Materials

    Advanced Materials, Vol. 33, Núm. 27

  2. In Situ Observation of Low-Power Nano-Synaptic Response in Graphene Oxide Using Conductive Atomic Force Microscopy

    Small, Vol. 17, Núm. 26

  3. Standards for the Characterization of Endurance in Resistive Switching Devices

    ACS Nano, Vol. 15, Núm. 11, pp. 17214-17231

2020

  1. Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks

    IEEE International Reliability Physics Symposium Proceedings

  2. Reversible dielectric breakdown in h-BN stacks: A statistical study of the switching voltages

    IEEE International Reliability Physics Symposium Proceedings

2019

  1. Recommended Methods to Study Resistive Switching Devices

    Advanced Electronic Materials, Vol. 5, Núm. 1

  2. Time series statistical analysis: A powerful tool to evaluate the variability of resistive switching memories

    Journal of Applied Physics, Vol. 125, Núm. 17

2017

  1. SIM2RRAM : a physical model for RRAM devices simulation

    Journal of Computational Electronics, Vol. 16, Núm. 4, pp. 1095-1120