Publicaciones en colaboración con investigadores/as de École Polytechnique Fédérale de Lausanne (42)

2022

  1. An ultrafast photodetector driven by interlayer exciton dissociation in a van der Waals heterostructure

    Nanoscale Horizons, Vol. 7, Núm. 1, pp. 41-50

  2. Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN

    Advanced Electronic Materials, Vol. 8, Núm. 9

2021

  1. MoS2/graphene Lateral Heterostructure Field Effect Transistors

    Device Research Conference - Conference Digest, DRC

2018

  1. Analysis of the heterogate electron-hole bilayer tunneling field-effect transistor with partially doped channels: Effects on tunneling distance modulation and occupancy probabilities

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 1, pp. 339-346

  2. Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor

    Applied Physics Letters, Vol. 112, Núm. 18

  3. Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 10, pp. 4679-4686

  4. Impact of electron effective mass variation on the performance of InAs/GaSb Electron-Hole Bilayer Tunneling Field-Effect Transistor

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  5. Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts

    Advanced Materials, Vol. 30, Núm. 18

2017

  1. A novel reconfigurable sub-0.25-V digital logic family using the electron-hole bilayer TFET

    IEEE Journal of the Electron Devices Society, Vol. 6, Núm. 1, pp. 2-7

  2. Circularly polarised broadband planar lightweight reflectarray with eligible pattern for satellite communications in Ku-band

    IET Microwaves, Antennas and Propagation, Vol. 11, Núm. 4, pp. 513-518

  3. Electromagnetic Near-Field Inhomogeneity Reduction for Image Acquisition Optimization in High-Resolution Multi-Channel Magnetic Resonance Imaging (MRI) Systems

    IEEE Access, Vol. 5, pp. 5149-5157

  4. Further on ‘broadband electronically tunable reflection-based phase shifter for active-steering microwave reflectarray systems in Ku-Band’: prototype validation

    Journal of Electromagnetic Waves and Applications, Vol. 31, Núm. 4, pp. 427-432

  5. Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 8, pp. 3084-3091

2016

  1. Assessment of confinement-induced band-To-band tunneling leakage in the FinEHBTFET

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

  2. Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor

    Journal of Applied Physics, Vol. 119, Núm. 4

  3. Broadband electronically tunable reflection-based phase shifter for active-steering microwave reflectarray systems in ku-band

    Journal of Electromagnetic Waves and Applications, Vol. 30, Núm. 12, pp. 1545-1551

  4. Broadband planar multilayered reflectarray based on circular stacked patches and reflective printed circuits for microwave communication systems

    Journal of Electromagnetic Waves and Applications, Vol. 30, Núm. 17, pp. 2344-2353

  5. Electronically Reconfigurable Reflective Phase Shifter for Circularly Polarized Reflectarray Systems

    IEEE Microwave and Wireless Components Letters, Vol. 26, Núm. 9, pp. 705-707

  6. Impact of device geometry of the fin Electron-Hole Bilayer Tunnel FET

    European Solid-State Device Research Conference

  7. Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 8, pp. 3320-3326