PEDRO CARTUJO ESTÉBANEZ-rekin lankidetzan egindako argitalpenak (10)

2005

  1. Monte Carlo simulation of velocity modulation transistors

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. Double gate silicon on insulator transistors. A Monte Carlo study

    Solid-State Electronics, Vol. 48, Núm. 6, pp. 937-945

2003

  1. Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs

    Semiconductor Science and Technology, Vol. 18, Núm. 11, pp. 927-937

2002

  1. Temperature dependence of generation-recombination noise in p-n junctions

    Journal De Physique. IV : JP

2001

  1. Contribution of injection in current noise due to generation and recombination of carriers in p-n junctions

    Journal of Applied Physics, Vol. 90, Núm. 8, pp. 3998-4006

  2. Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling

    IEEE Transactions on Electron Devices, Vol. 48, Núm. 10, pp. 2447-2449

1997

  1. Contribution of the carrier number fluctuation and mobility fluctuation on the RTS amplitude in submicron n-MOSFETs

    Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations

  2. Influence of the doping profile and deep level trap characteristics on generation-recombination noise

    Journal of Applied Physics, Vol. 82, Núm. 7, pp. 3351-3357

1996

  1. Capture process by shallow donors in silicon at low temperatures

    Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 105-110

1995

  1. Monte Carlo simulation of multiphonon capture mechanism by deep neutral impurities in Si in the presence of an electric field

    Journal of Applied Physics, Vol. 78, Núm. 9, pp. 5448-5453