University of Pisa-ko ikertzaileekin lankidetzan egindako argitalpenak (40)

2024

  1. CVD graphene contacts for lateral heterostructure MoS2 field effect transistors

    npj 2D Materials and Applications, Vol. 8, Núm. 1

  2. Numerical study of synaptic behavior in amorphous HfO2-based ferroelectric-like FETs generated by voltage-driven ion migration

    Journal of Applied Physics, Vol. 136, Núm. 12

  3. Simulations of 2-D Materials-Based Field Effect Transistors for Quantum Cascade Detectors

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 1, pp. 630-636

2023

  1. A 2-D-Material FET Verilog-A Model for Analog Neuromorphic Circuit Design

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 9, pp. 4945-4952

  2. Electrically tunable lateral spin-valve transistor based on bilayer CrI3

    npj 2D Materials and Applications, Vol. 7, Núm. 1

  3. Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite

    Journal of Computational Electronics, Vol. 22, Núm. 5, pp. 1327-1337

2022

  1. An ultrafast photodetector driven by interlayer exciton dissociation in a van der Waals heterostructure

    Nanoscale Horizons, Vol. 7, Núm. 1, pp. 41-50

  2. Electronic Transport in 2D-Based Printed FETs from a Multiscale Perspective

    Advanced Electronic Materials, Vol. 8, Núm. 5

  3. Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN

    Advanced Electronic Materials, Vol. 8, Núm. 9

2021

  1. A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 6, pp. 3096-3103

  2. Electric-field controlled spin transport in bilayer CrI3

    European Solid-State Device Research Conference

  3. Electric-field controlled spin transport in bilayer CrI3

    ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference, Proceedings

  4. MoS2/graphene Lateral Heterostructure Field Effect Transistors

    Device Research Conference - Conference Digest, DRC

  5. Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe2 via Ab initio modelling of interfaces

    Scientific Reports, Vol. 11, Núm. 1

  6. Transport properties in partially overlapping van der Waals junctions through a multiscale investigation

    Physical Review B, Vol. 104, Núm. 8

2020

  1. Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

    ACS Nano, Vol. 14, Núm. 2, pp. 1982-1989

  2. Sub-Maxwellian Source Injection and Negative Differential Transconductance in Decorated Graphene Nanoribbons

    Physical Review Applied, Vol. 14, Núm. 6

2019

  1. A Compact Charge and Surface Potential Model for III-V Cylindrical Nanowire Transistors

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 1, pp. 73-79

  2. A compact model for III–V nanowire electrostatics including band non-parabolicity

    Journal of Computational Electronics, Vol. 18, Núm. 4, pp. 1229-1235

  3. Assessment of three electrolyte-molecule electrostatic interaction models for 2D material based BioFETs

    Nanoscale Advances, Vol. 1, Núm. 3, pp. 1077-1085