Publications en collaboration avec des chercheurs de University of Pisa (39)

2024

  1. CVD graphene contacts for lateral heterostructure MoS2 field effect transistors

    npj 2D Materials and Applications, Vol. 8, Núm. 1

  2. Simulations of 2-D Materials-Based Field Effect Transistors for Quantum Cascade Detectors

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 1, pp. 630-636

2023

  1. A 2-D-Material FET Verilog-A Model for Analog Neuromorphic Circuit Design

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 9, pp. 4945-4952

  2. Electrically tunable lateral spin-valve transistor based on bilayer CrI3

    npj 2D Materials and Applications, Vol. 7, Núm. 1

  3. Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite

    Journal of Computational Electronics, Vol. 22, Núm. 5, pp. 1327-1337

2022

  1. An ultrafast photodetector driven by interlayer exciton dissociation in a van der Waals heterostructure

    Nanoscale Horizons, Vol. 7, Núm. 1, pp. 41-50

  2. Electronic Transport in 2D-Based Printed FETs from a Multiscale Perspective

    Advanced Electronic Materials, Vol. 8, Núm. 5

  3. Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN

    Advanced Electronic Materials, Vol. 8, Núm. 9

2021

  1. A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 6, pp. 3096-3103

  2. Electric-field controlled spin transport in bilayer CrI3

    ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference, Proceedings

  3. Electric-field controlled spin transport in bilayer CrI3

    European Solid-State Device Research Conference

  4. MoS2/graphene Lateral Heterostructure Field Effect Transistors

    Device Research Conference - Conference Digest, DRC

  5. Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe2 via Ab initio modelling of interfaces

    Scientific Reports, Vol. 11, Núm. 1

  6. Transport properties in partially overlapping van der Waals junctions through a multiscale investigation

    Physical Review B, Vol. 104, Núm. 8

2020

  1. Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

    ACS Nano, Vol. 14, Núm. 2, pp. 1982-1989

  2. Sub-Maxwellian Source Injection and Negative Differential Transconductance in Decorated Graphene Nanoribbons

    Physical Review Applied, Vol. 14, Núm. 6

2019

  1. A Compact Charge and Surface Potential Model for III-V Cylindrical Nanowire Transistors

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 1, pp. 73-79

  2. A compact model for III–V nanowire electrostatics including band non-parabolicity

    Journal of Computational Electronics, Vol. 18, Núm. 4, pp. 1229-1235

  3. Assessment of three electrolyte-molecule electrostatic interaction models for 2D material based BioFETs

    Nanoscale Advances, Vol. 1, Núm. 3, pp. 1077-1085

  4. Charge and Capacitance Compact Model for III-V Quadruple-Gate FETs with Square Geometry

    2019 IEEE International Conference on Modeling of Systems Circuits and Devices, MOS-AK India 2019