Publikationen, an denen er mitarbeitet FRANCISCO JAVIER GARCÍA RUIZ (26)

2019

  1. A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations

    Solid-State Electronics, Vol. 159, pp. 19-25

2018

  1. 3D multi-subband ensemble Monte Carlo simulation of 〈100〉 and 〈110〉 Si nanowire FETs

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  2. Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs

    Solid-State Electronics, Vol. 143, pp. 49-55

2017

  1. Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs

    2017 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2017)

  2. Multi-subband ensemble Monte Carlo simulations of scaled GAA MOSFETs

    Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

  3. Three-dimensional Multi-subband Simulation of Scaled FinFETs

    2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)

  4. Three-dimensional multi-subband simulation of scaled FinFETs

    European Solid-State Device Research Conference

2015

  1. Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2014

  1. 3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2011

  1. HOME-MADE SOFTWARE FOR AUTONOMOUS EDUCATION OF MICROWAVE AMPLIFIERS

    2011 4TH INTERNATIONAL CONFERENCE OF EDUCATION, RESEARCH AND INNOVATION (ICERI)

  2. Simulation of the electrostatic and transport properties of 3D-stacked GAA silicon nanowire FETs

    Solid-State Electronics

2010

  1. An analytical I-V model for surrounding-gate transistors that includes quantum and velocity overshoot effects

    IEEE Transactions on Electron Devices, Vol. 57, Núm. 11, pp. 2925-2933

  2. Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI

    Solid-State Electronics, Vol. 54, Núm. 2, pp. 131-136

2009

  1. A new inversion charge centroid model for surrounding gate transistors with HfO2 as gate insulator

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Accurate simulation of the electron density of surrounding gate transistors

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. Monte Carlo simulation of nanoelectronic devices

    Journal of Computational Electronics, Vol. 8, Núm. 3-4, pp. 174-191

  4. Quantum Monte Carlo simulation of ultra-short DGSOI devices: A multi-subband approach

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Accurate modeling of metal/HfO2/Si capacitors

    Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 155-158

  2. Monte Carlo simulation of low-field mobility in strained double gate SOI transistors

    Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 205-208

2007

  1. A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects

    IEEE Transactions on Electron Devices, Vol. 54, Núm. 12, pp. 3369-3377