Publications dans lesquelles il/elle collabore avec CARLOS NAVARRO MORAL (19)

2024

  1. Editorial “Selected papers from the international conference on simulation of semiconductor processes and devices 2022”

    Solid-State Electronics

2023

  1. 3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology

    Solid-State Electronics, Vol. 200

  2. Description of Gate-to-Channel Tunneling Leakage Mechanism in a 2D Monte Carlo Simulator

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. Liquid-gate 2D material-on-insulator transistors for sensing applications

    Solid-State Electronics, Vol. 207

  4. Simulation of BioGFET sensors using TCAD

    Solid-State Electronics, Vol. 208

2022

  1. Analysis of the Reformulated Source to Drain Tunneling Probability for Improving the Accuracy of a Multisubband Ensemble Monte Carlo Simulator

    Micromachines, Vol. 13, Núm. 4

  2. DFT-based layered dielectric model of few-layer MoS2

    Solid-State Electronics, Vol. 194

  3. Performance of FDSOI double-gate dual-doped reconfigurable FETs

    Solid-State Electronics, Vol. 194

  4. Towards a DFT-based layered model for TCAD simulations of MoS2

    Solid-State Electronics, Vol. 197

2020

  1. Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

2019

  1. Capacitorless memory devices using virtual junctions

    19th International Workshop on Junction Technology, IWJT 2019

  2. Capacitorless memory devices using virtual junctions

    2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)

  3. On the Low-Frequency Noise Characterization of Z2-FET Devices

    IEEE Access, Vol. 7, pp. 42551-42556

2018

  1. Gate-induced vs. implanted body doping impact on Z2-FET DC operation

    2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017

  2. InGaAs Capacitor-Less DRAM Cells TCAD Demonstration

    IEEE Journal of the Electron Devices Society, Vol. 6, pp. 884-892

  3. Towards InGaAs MSDRAM capacitor-less cells

    ECS Transactions

2017

  1. Gate-induced vs. implanted body doping impact on Z(2)-FET DC operation

    2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)

2013

  1. Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

    Journal of Applied Physics, Vol. 113, Núm. 14

2012

  1. Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET

    European Solid-State Device Research Conference