Publicaciones en las que colabora con ALBERTO JOSÉ PALMA LÓPEZ (11)

2003

  1. Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices

    Microelectronics Reliability

2002

  1. Direct and trap-assisted elastic tunneling through ultrathin gate oxides

    Journal of Applied Physics, Vol. 91, Núm. 8, pp. 5116-5124

2001

  1. A simple subthreshold swing model for short channel MOSFETs

    Solid-State Electronics, Vol. 45, Núm. 3, pp. 391-397

  2. Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures

    Journal of Applied Physics, Vol. 90, Núm. 7, pp. 3396-3404

2000

  1. Effects of the inversion-layer centroid on the performance of double-gate MOSFET's

    IEEE Transactions on Electron Devices, Vol. 47, Núm. 1, pp. 141-146

  2. Influence of technological parameters on the behavior of the hole effective mass in SiGe structures

    Journal of Applied Physics, Vol. 88, Núm. 4, pp. 1978-1982

1997

  1. Contribution of the carrier number fluctuation and mobility fluctuation on the RTS amplitude in submicron n-MOSFETs

    Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations

  2. Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect transistors

    Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4621-4628

  3. Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors

    Applied Physics Letters, Vol. 70, Núm. 16, pp. 2153-2155

1994

  1. A comprehensive model for Coulomb scattering in inversion layers

    Journal of Applied Physics, Vol. 75, Núm. 2, pp. 924-934

  2. Effects of oxide-charge space correlation on electron mobility in inversion layers

    Semiconductor Science and Technology, Vol. 9, Núm. 5, pp. 1102-1107