Publicaciones en las que colabora con Carlos Navarro (61)

2024

  1. Low-Frequency Noise in InGaAs-OI Transistors

    IEEE Transactions on Electron Devices

2023

  1. 3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology

    Solid-State Electronics, Vol. 200

  2. Description of Gate-to-Channel Tunneling Leakage Mechanism in a 2D Monte Carlo Simulator

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. Liquid-gate 2D material-on-insulator transistors for sensing applications

    Solid-State Electronics, Vol. 207

  4. Low-Frequency Noise in InGaAs-OI 1T-DRAMs

    2023 International Conference on Noise and Fluctuations, ICNF 2023

  5. Simulation of BioGFET sensors using TCAD

    Solid-State Electronics, Vol. 208

2022

  1. Analysis of the Reformulated Source to Drain Tunneling Probability for Improving the Accuracy of a Multisubband Ensemble Monte Carlo Simulator

    Micromachines, Vol. 13, Núm. 4

  2. DFT-based layered dielectric model of few-layer MoS2

    Solid-State Electronics, Vol. 194

  3. Improved inter-device variability in graphene liquid gate sensors by laser treatment

    Solid-State Electronics, Vol. 192

  4. Performance of FDSOI double-gate dual-doped reconfigurable FETs

    Solid-State Electronics, Vol. 194

  5. Towards a DFT-based layered model for TCAD simulations of MoS2

    Solid-State Electronics, Vol. 197

2021

  1. A review of sharp-switching band-modulation devices

    Micromachines, Vol. 12, Núm. 12

  2. Hysteresis in as-synthesized mos2 transistors: Origin and sensing perspectives

    Micromachines, Vol. 12, Núm. 6

  3. Improved inter-device variability in graphene liquid gate sensors by laser treatment

    2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021

  4. Improved retention characteristics of Z2-FET employing half back-gate control

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 3, pp. 1041-1044

  5. Memory Operation of Z²-FET without Selector at High Temperature

    IEEE Journal of the Electron Devices Society, Vol. 9, pp. 658-662

  6. Performance and reliability in back-gated CVD-grown MoS2 devices

    Solid-State Electronics, Vol. 186

2020

  1. CVD-grown back-gated MoS2transistors

    2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020

  2. Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic

    IEEE Access, Vol. 8, pp. 132376-132381

  3. Investigating the transient response of Schottky barrier back-gated MoS2 transistors

    2D Materials, Vol. 7, Núm. 2