FRANCISCO JAVIER
GARCÍA RUIZ
CATEDRÁTICO DE UNIVERSIDAD
CARLOS
SAMPEDRO MATARÍN
CATEDRÁTICO DE UNIVERSIDAD
Publicacions en què col·labora amb CARLOS SAMPEDRO MATARÍN (26)
2019
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A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations
Solid-State Electronics, Vol. 159, pp. 19-25
2018
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3D multi-subband ensemble Monte Carlo simulation of 〈100〉 and 〈110〉 Si nanowire FETs
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
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Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs
Solid-State Electronics, Vol. 143, pp. 49-55
2017
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Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs
2017 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2017)
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Multi-subband ensemble Monte Carlo simulations of scaled GAA MOSFETs
Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
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Three-dimensional Multi-subband Simulation of Scaled FinFETs
2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)
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Three-dimensional multi-subband simulation of scaled FinFETs
European Solid-State Device Research Conference
2015
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Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2014
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3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2011
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HOME-MADE SOFTWARE FOR AUTONOMOUS EDUCATION OF MICROWAVE AMPLIFIERS
2011 4TH INTERNATIONAL CONFERENCE OF EDUCATION, RESEARCH AND INNOVATION (ICERI)
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Simulation of the electrostatic and transport properties of 3D-stacked GAA silicon nanowire FETs
Solid-State Electronics
2010
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An analytical I-V model for surrounding-gate transistors that includes quantum and velocity overshoot effects
IEEE Transactions on Electron Devices, Vol. 57, Núm. 11, pp. 2925-2933
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Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
Solid-State Electronics, Vol. 54, Núm. 2, pp. 131-136
2009
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A new inversion charge centroid model for surrounding gate transistors with HfO2 as gate insulator
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
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Accurate simulation of the electron density of surrounding gate transistors
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
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Monte Carlo simulation of nanoelectronic devices
Journal of Computational Electronics, Vol. 8, Núm. 3-4, pp. 174-191
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Quantum Monte Carlo simulation of ultra-short DGSOI devices: A multi-subband approach
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
2008
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Accurate modeling of metal/HfO2/Si capacitors
Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 155-158
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Monte Carlo simulation of low-field mobility in strained double gate SOI transistors
Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 205-208
2007
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A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects
IEEE Transactions on Electron Devices, Vol. 54, Núm. 12, pp. 3369-3377