Publicaciones en las que colabora con Carlos Navarro (10)

2023

  1. 3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology

    Solid-State Electronics, Vol. 200

  2. Description of Gate-to-Channel Tunneling Leakage Mechanism in a 2D Monte Carlo Simulator

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2022

  1. Analysis of the Reformulated Source to Drain Tunneling Probability for Improving the Accuracy of a Multisubband Ensemble Monte Carlo Simulator

    Micromachines, Vol. 13, Núm. 4

  2. DFT-based layered dielectric model of few-layer MoS2

    Solid-State Electronics, Vol. 194

  3. Performance of FDSOI double-gate dual-doped reconfigurable FETs

    Solid-State Electronics, Vol. 194

  4. Towards a DFT-based layered model for TCAD simulations of MoS2

    Solid-State Electronics, Vol. 197

2020

  1. Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

2019

  1. 3-D TCAD Study of the implications of channel width and interface states on FD-SOI Z2-FETs

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 6, pp. 2513-2519

  2. On the Low-Frequency Noise Characterization of Z2-FET Devices

    IEEE Access, Vol. 7, pp. 42551-42556

2018

  1. Analysis of the heterogate electron-hole bilayer tunneling field-effect transistor with partially doped channels: Effects on tunneling distance modulation and occupancy probabilities

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 1, pp. 339-346