JUAN BAUTISTA
ROLDÁN ARANDA
CATEDRÁTICO DE UNIVERSIDAD
NOEL
RODRÍGUEZ SANTIAGO
CATEDRÁTICO DE UNIVERSIDAD
Publications dans lesquelles il/elle collabore avec NOEL RODRÍGUEZ SANTIAGO (7)
2019
2010
-
An analytical I-V model for surrounding-gate transistors that includes quantum and velocity overshoot effects
IEEE Transactions on Electron Devices, Vol. 57, Núm. 11, pp. 2925-2933
-
Hole transport in DGSOI devices: Orientation and silicon thickness effects
Solid-State Electronics, Vol. 54, Núm. 2, pp. 191-195
2009
-
Monte Carlo simulation of nanoelectronic devices
Journal of Computational Electronics, Vol. 8, Núm. 3-4, pp. 174-191
2007
-
An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms
Semiconductor Science and Technology, Vol. 22, Núm. 4, pp. 348-353
-
Modeling of inversion layer centroid and polysilicon depletion effects on ultrathin-gate-oxide mOSFET behavior: The influence of crystallographic orientation
IEEE Transactions on Electron Devices, Vol. 54, Núm. 4, pp. 723-732
2006
-
Characterization of electron transport at high fields in silicon-on-insulator devices: A Monte Carlo study
Semiconductor Science and Technology, Vol. 21, Núm. 1, pp. 81-86