PEDRO
CARTUJO ESTÉBANEZ
Investigador en el període 2008-2009
JUAN ANTONIO
JIMÉNEZ TEJADA
CATEDRÁTICO DE UNIVERSIDAD
Publicacions en què col·labora amb JUAN ANTONIO JIMÉNEZ TEJADA (13)
2002
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Temperature dependence of generation-recombination noise in p-n junctions
Journal De Physique. IV : JP
2001
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Contribution of injection in current noise due to generation and recombination of carriers in p-n junctions
Journal of Applied Physics, Vol. 90, Núm. 8, pp. 3998-4006
1997
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Contribution of the carrier number fluctuation and mobility fluctuation on the RTS amplitude in submicron n-MOSFETs
Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations
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Influence of the doping profile and deep level trap characteristics on generation-recombination noise
Journal of Applied Physics, Vol. 82, Núm. 7, pp. 3351-3357
1996
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Capture process by shallow donors in silicon at low temperatures
Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 105-110
1995
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Monte Carlo simulation of multiphonon capture mechanism by deep neutral impurities in Si in the presence of an electric field
Journal of Applied Physics, Vol. 78, Núm. 9, pp. 5448-5453
1993
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Accurate determination of majority thermal-capture cross sections of deep impurities in p-n junctions
Journal of Applied Physics, Vol. 74, Núm. 4, pp. 2605-2612
1992
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A high-frequency bidirectional capacitance method to study the evolution of the interface state density generated at low temperatures
Solid State Electronics, Vol. 35, Núm. 1, pp. 73-81
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A non-destructive method to determine impurity-profiles in non-abrupt p-n junctions with deep levels
Solid State Electronics, Vol. 35, Núm. 12, pp. 1729-1736
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Evolution of electrical magnitudes in gradual p-n junctions with deep levels during the emission of majority carriers
Journal of Applied Physics, Vol. 72, Núm. 10, pp. 4946-4953
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Importance of the choice of the profile model for a p-n junction in the location of deep levels
Journal of Electronic Materials, Vol. 21, Núm. 9, pp. 883-886
1991
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Analysis of the effects of constant-current Fowler-Nordheim-tunneling injection with charge trapping inside the potential barrier
Journal of Applied Physics, Vol. 70, Núm. 7, pp. 3712-3720
1990
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Analysis of a reverse-biased linearly graded junction with high concentration of deep impurities
Solid State Electronics, Vol. 33, Núm. 7, pp. 805-811