PEDRO
CARTUJO ESTÉBANEZ
Investigador en el període 2008-2009
ANDRÉS
GODOY MEDINA
CATEDRÁTICO DE UNIVERSIDAD
Publicacions en què col·labora amb ANDRÉS GODOY MEDINA (10)
2005
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Monte Carlo simulation of velocity modulation transistors
2005 Spanish Conference on Electron Devices, Proceedings
2004
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Double gate silicon on insulator transistors. A Monte Carlo study
Solid-State Electronics, Vol. 48, Núm. 6, pp. 937-945
2003
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Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs
Semiconductor Science and Technology, Vol. 18, Núm. 11, pp. 927-937
2002
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Temperature dependence of generation-recombination noise in p-n junctions
Journal De Physique. IV : JP
2001
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Contribution of injection in current noise due to generation and recombination of carriers in p-n junctions
Journal of Applied Physics, Vol. 90, Núm. 8, pp. 3998-4006
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Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling
IEEE Transactions on Electron Devices, Vol. 48, Núm. 10, pp. 2447-2449
1997
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Contribution of the carrier number fluctuation and mobility fluctuation on the RTS amplitude in submicron n-MOSFETs
Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations
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Influence of the doping profile and deep level trap characteristics on generation-recombination noise
Journal of Applied Physics, Vol. 82, Núm. 7, pp. 3351-3357
1996
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Capture process by shallow donors in silicon at low temperatures
Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 105-110
1995
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Monte Carlo simulation of multiphonon capture mechanism by deep neutral impurities in Si in the presence of an electric field
Journal of Applied Physics, Vol. 78, Núm. 9, pp. 5448-5453