Publicaciones en las que colabora con PEDRO CARTUJO ESTÉBANEZ (13)

2002

  1. Temperature dependence of generation-recombination noise in p-n junctions

    Journal De Physique. IV : JP

2001

  1. Contribution of injection in current noise due to generation and recombination of carriers in p-n junctions

    Journal of Applied Physics, Vol. 90, Núm. 8, pp. 3998-4006

1997

  1. Contribution of the carrier number fluctuation and mobility fluctuation on the RTS amplitude in submicron n-MOSFETs

    Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations

  2. Influence of the doping profile and deep level trap characteristics on generation-recombination noise

    Journal of Applied Physics, Vol. 82, Núm. 7, pp. 3351-3357

1996

  1. Capture process by shallow donors in silicon at low temperatures

    Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 105-110

1995

  1. Monte Carlo simulation of multiphonon capture mechanism by deep neutral impurities in Si in the presence of an electric field

    Journal of Applied Physics, Vol. 78, Núm. 9, pp. 5448-5453

1993

  1. Accurate determination of majority thermal-capture cross sections of deep impurities in p-n junctions

    Journal of Applied Physics, Vol. 74, Núm. 4, pp. 2605-2612

1992

  1. A high-frequency bidirectional capacitance method to study the evolution of the interface state density generated at low temperatures

    Solid State Electronics, Vol. 35, Núm. 1, pp. 73-81

  2. A non-destructive method to determine impurity-profiles in non-abrupt p-n junctions with deep levels

    Solid State Electronics, Vol. 35, Núm. 12, pp. 1729-1736

  3. Evolution of electrical magnitudes in gradual p-n junctions with deep levels during the emission of majority carriers

    Journal of Applied Physics, Vol. 72, Núm. 10, pp. 4946-4953

  4. Importance of the choice of the profile model for a p-n junction in the location of deep levels

    Journal of Electronic Materials, Vol. 21, Núm. 9, pp. 883-886

1991

  1. Analysis of the effects of constant-current Fowler-Nordheim-tunneling injection with charge trapping inside the potential barrier

    Journal of Applied Physics, Vol. 70, Núm. 7, pp. 3712-3720

1990

  1. Analysis of a reverse-biased linearly graded junction with high concentration of deep impurities

    Solid State Electronics, Vol. 33, Núm. 7, pp. 805-811