Publicaciones en colaboración con investigadores/as de STMicroelectronics (10)

2019

  1. 3-D TCAD Study of the implications of channel width and interface states on FD-SOI Z2-FETs

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 6, pp. 2513-2519

  2. Capacitorless memory devices using virtual junctions

    2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)

  3. Capacitorless memory devices using virtual junctions

    19th International Workshop on Junction Technology, IWJT 2019

  4. Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells

    Solid-State Electronics, Vol. 159, pp. 12-18

  5. On the Low-Frequency Noise Characterization of Z2-FET Devices

    IEEE Access, Vol. 7, pp. 42551-42556

  6. Reliability study of thin-oxide zero-ionization, zero-swing FET 1T-DRAM memory cell

    IEEE Electron Device Letters, Vol. 40, Núm. 7, pp. 1084-1087

  7. Temperature and Gate Leakage Influence on the Z(2)-FET Memory Operation

    49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019)

  8. Temperature and Gate Leakage Influence on the Z2-FET Memory Operation

    European Solid-State Device Research Conference

2018

  1. Evaluation of thin-oxide Z2-FET DRAM cell

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  2. Experimental Demonstration of Operational Z2-FET Memory Matrix

    IEEE Electron Device Letters, Vol. 39, Núm. 5, pp. 660-663