Publicaciones en las que colabora con FRANCISCO JIMÉNEZ MOLINOS (12)

2024

  1. Variability in HfO2-based memristors described with a new bidimensional statistical technique

    Nanoscale, Vol. 16, Núm. 22, pp. 10812-10818

2023

  1. Variability in Resistive Memories

    Advanced Intelligent Systems, Vol. 5, Núm. 6

2021

  1. Advanced temperature dependent statistical analysis of forming voltage distributions for three different HfO2-based RRAM technologies

    Solid-State Electronics, Vol. 176

  2. Homogeneity problem for basis expansion of functional data with applications to resistive memories

    Mathematics and Computers in Simulation, Vol. 186, pp. 41-51

  3. Time series modeling of the cycle-to-cycle variability in h-BN based memristors

    IEEE International Reliability Physics Symposium Proceedings

2020

  1. Reversible dielectric breakdown in h-BN stacks: A statistical study of the switching voltages

    IEEE International Reliability Physics Symposium Proceedings

2019

  1. Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs

    Microelectronic Engineering, Vol. 214, pp. 104-109

  2. Phase-type distributions for studying variability in resistive memories

    Journal of Computational and Applied Mathematics, Vol. 345, pp. 23-32

  3. Resistive switching and charge transport in laser-fabricated graphene oxide memristors: A time series and quantum point contact modeling approach

    Materials, Vol. 12, Núm. 22

  4. Stochastic modeling of Random Access Memories reset transitions

    Mathematics and Computers in Simulation, Vol. 159, pp. 197-209

2018

  1. Modelling Resistive Random Access Memories by Means of Functional Principal Component Analysis

    Advances in Mass Data Analysis of Images and Signals with Applications in Medicine, r/g/b Biotechnology, Food Industries and Dietetics, Biometry and Security, Agriculture, Drug Discover, and System Biology - 12th International Conference, MDA 2017, Proceedings

  2. Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

    Journal of Applied Physics, Vol. 123, Núm. 1