ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
DEPARTAMENTO
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Universitat de Barcelona
Barcelona, EspañaPublicaciones en colaboración con investigadores/as de Universitat de Barcelona (16)
2024
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High-Temporal-Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h-BN Memristors
Advanced Functional Materials, Vol. 34, Núm. 15
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Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors
ACS Applied Electronic Materials, Vol. 6, Núm. 2, pp. 1424-1433
2023
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Holistic Variability Analysis in Resistive Switching Memories Using a Two-Dimensional Variability Coefficient
ACS Applied Materials and Interfaces, Vol. 15, Núm. 15, pp. 19102-19110
2022
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Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller
Nanoscale, Vol. 15, Núm. 5, pp. 2171-2180
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Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching
Advanced Electronic Materials, Vol. 8, Núm. 8
2021
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Advanced Data Encryption using 2D Materials
Advanced Materials, Vol. 33, Núm. 27
1998
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Monte Carlo simulation of a submicron MOSFET including inversion layer quantization
VLSI Design, Vol. 6, Núm. 1-4, pp. 287-290
1990
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Analysis of a reverse-biased linearly graded junction with high concentration of deep impurities
Solid State Electronics, Vol. 33, Núm. 7, pp. 805-811
1986
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Analysis of the edge region photocapacitance at constant bias in Te-doped Al0.55Ga0.45As
Solid State Electronics, Vol. 29, Núm. 7, pp. 759-766
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Dependence of the optical cross section of interface states on the photon energy at Si-SiO2 structures
Surface Science, Vol. 168, Núm. 1-3, pp. 665-671
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Majority-carrier capture cross-section determination in the large deep-trap concentration cases
Journal of Applied Physics, Vol. 59, Núm. 5, pp. 1562-1569
1983
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Characterization of the interface states at A1-GaAs schottky barriers with a thin interface layer
Solid State Electronics, Vol. 26, Núm. 6, pp. 537-538
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Thermal emission rates and capture cross-section of majority carriers at titanium levels in silicon
Solid State Electronics, Vol. 26, Núm. 1, pp. 1-6
1982
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Analysis of Thermal Capture of the Acceptor Level of Gold in Silicon
physica status solidi (b), Vol. 111, Núm. 1, pp. 375-382
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Dependence of the electron cross section for the acceptor gold level in silicon on the gold to donor ratio
Applied Physics Letters, Vol. 41, Núm. 7, pp. 656-658
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Interpretation of the electron capture by multiphonon emission at native levels in LPE gallium arsenide
Journal of Physics C: Solid State Physics, Vol. 15, Núm. 7