Publicaciones en colaboración con investigadores/as de Universitat de Barcelona (16)

2024

  1. Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors

    ACS Applied Electronic Materials, Vol. 6, Núm. 2, pp. 1424-1433

2023

  1. High-Temporal-Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h-BN Memristors

    Advanced Functional Materials

  2. Holistic Variability Analysis in Resistive Switching Memories Using a Two-Dimensional Variability Coefficient

    ACS Applied Materials and Interfaces, Vol. 15, Núm. 15, pp. 19102-19110

2022

  1. Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller

    Nanoscale, Vol. 15, Núm. 5, pp. 2171-2180

  2. Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

    Advanced Electronic Materials, Vol. 8, Núm. 8

2021

  1. Advanced Data Encryption ​using 2D Materials

    Advanced Materials, Vol. 33, Núm. 27

1998

  1. Monte Carlo simulation of a submicron MOSFET including inversion layer quantization

    VLSI Design, Vol. 6, Núm. 1-4, pp. 287-290

1990

  1. Analysis of a reverse-biased linearly graded junction with high concentration of deep impurities

    Solid State Electronics, Vol. 33, Núm. 7, pp. 805-811

1986

  1. Analysis of the edge region photocapacitance at constant bias in Te-doped Al0.55Ga0.45As

    Solid State Electronics, Vol. 29, Núm. 7, pp. 759-766

  2. Dependence of the optical cross section of interface states on the photon energy at Si-SiO2 structures

    Surface Science, Vol. 168, Núm. 1-3, pp. 665-671

  3. Majority-carrier capture cross-section determination in the large deep-trap concentration cases

    Journal of Applied Physics, Vol. 59, Núm. 5, pp. 1562-1569

1983

  1. Characterization of the interface states at A1-GaAs schottky barriers with a thin interface layer

    Solid State Electronics, Vol. 26, Núm. 6, pp. 537-538

  2. Thermal emission rates and capture cross-section of majority carriers at titanium levels in silicon

    Solid State Electronics, Vol. 26, Núm. 1, pp. 1-6

1982

  1. Analysis of Thermal Capture of the Acceptor Level of Gold in Silicon

    physica status solidi (b), Vol. 111, Núm. 1, pp. 375-382

  2. Dependence of the electron cross section for the acceptor gold level in silicon on the gold to donor ratio

    Applied Physics Letters, Vol. 41, Núm. 7, pp. 656-658

  3. Interpretation of the electron capture by multiphonon emission at native levels in LPE gallium arsenide

    Journal of Physics C: Solid State Physics, Vol. 15, Núm. 7