ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES

1995

1. A comparison of models for phonon scattering in silicon inversion layers

   Journal of Applied Physics, Vol. 77, Núm. 8, pp. 4128-4129

2. A model for the quantized accumulation layer in metal-insulator-semiconductor structures

   Solid State Electronics, Vol. 38, Núm. 1, pp. 203-210

3. Comprehensive Monte Carlo simulation of the nonradiative carrier capture process by impurities in semiconductors

   Journal of Applied Physics, Vol. 77, Núm. 5, pp. 1998-2005

4. Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs

   Solid State Electronics, Vol. 38, Núm. 3, pp. 611-614

5. Electron trapping and detrapping in near-interfacial traps during Fowler-Nordheim tunneling injection at 77 K

   Microelectronic Engineering, Vol. 28, Núm. 1-4, pp. 317-320

6. Influence of negatively and positively charged scattering centers on electron mobility in semiconductor inversion layers: A Monte Carlo study

   Journal of Applied Physics, Vol. 78, Núm. 3, pp. 1787-1792

7. Influence of the Oxide-Charge Distribution Profile on Electron Mobility in MOSFET's

   IEEE Transactions on Electron Devices, Vol. 42, Núm. 5, pp. 999-1004

8. Influence of the position of deep levels on generation-recombination noise

   Applied Physics Letters, Vol. 67, pp. 3581

9. Monte Carlo simulation of multiphonon capture mechanism by deep neutral impurities in Si in the presence of an electric field

   Journal of Applied Physics, Vol. 78, Núm. 9, pp. 5448-5453

10. Monte Carlo study of the statistics of electron capture by shallow donors in silicon at low temperatures

    Physical Review B, Vol. 51, Núm. 20, pp. 14147-14151

11. Oxide charge space correlation in inversion layers. II. Three-dimensional oxide charge distribution

    Semiconductor Science and Technology, Vol. 10, Núm. 5, pp. 592-600

12. Universality of electron mobility curves in MOSFETs: a Monte Carlo study

    IEEE Transactions on Electron Devices, Vol. 42, Núm. 2, pp. 258-265