Publicaciones (15) Publicaciones en las que ha participado algún/a investigador/a

1995

  1. A comparison of models for phonon scattering in silicon inversion layers

    Journal of Applied Physics, Vol. 77, Núm. 8, pp. 4128-4129

  2. A model for the quantized accumulation layer in metal-insulator-semiconductor structures

    Solid State Electronics, Vol. 38, Núm. 1, pp. 203-210

  3. Comprehensive Monte Carlo simulation of the nonradiative carrier capture process by impurities in semiconductors

    Journal of Applied Physics, Vol. 77, Núm. 5, pp. 1998-2005

  4. Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs

    Solid State Electronics, Vol. 38, Núm. 3, pp. 611-614

  5. Electron trapping and detrapping in near-interfacial traps during Fowler-Nordheim tunneling injection at 77 K

    Microelectronic Engineering, Vol. 28, Núm. 1-4, pp. 317-320

  6. Estudio de la captura térmica por defectos en Si Y GaAs

    Universidad de Granada

  7. Influence of negatively and positively charged scattering centers on electron mobility in semiconductor inversion layers: A Monte Carlo study

    Journal of Applied Physics, Vol. 78, Núm. 3, pp. 1787-1792

  8. Influence of the Oxide-Charge Distribution Profile on Electron Mobility in MOSFET's

    IEEE Transactions on Electron Devices, Vol. 42, Núm. 5, pp. 999-1004

  9. Influence of the position of deep levels on generation-recombination noise

    Applied Physics Letters, Vol. 67, pp. 3581

  10. Introducción a la Informática

    Madrid : McGraw-Hill/Interamericana de España, D.L. 1995

  11. Monte Carlo simulation of multiphonon capture mechanism by deep neutral impurities in Si in the presence of an electric field

    Journal of Applied Physics, Vol. 78, Núm. 9, pp. 5448-5453

  12. Monte Carlo study of the statistics of electron capture by shallow donors in silicon at low temperatures

    Physical Review B, Vol. 51, Núm. 20, pp. 14147-14151

  13. Multiplicación en el sistema numérico de residuos

    Universidad de Granada

  14. Oxide charge space correlation in inversion layers. II. Three-dimensional oxide charge distribution

    Semiconductor Science and Technology, Vol. 10, Núm. 5, pp. 592-600

  15. Universality of electron mobility curves in MOSFETs: a Monte Carlo study

    IEEE Transactions on Electron Devices, Vol. 42, Núm. 2, pp. 258-265