Departamento
ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
Publicaciones (15) Publicaciones en las que ha participado algún/a investigador/a
1995
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A comparison of models for phonon scattering in silicon inversion layers
Journal of Applied Physics, Vol. 77, Núm. 8, pp. 4128-4129
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A model for the quantized accumulation layer in metal-insulator-semiconductor structures
Solid State Electronics, Vol. 38, Núm. 1, pp. 203-210
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Comprehensive Monte Carlo simulation of the nonradiative carrier capture process by impurities in semiconductors
Journal of Applied Physics, Vol. 77, Núm. 5, pp. 1998-2005
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Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs
Solid State Electronics, Vol. 38, Núm. 3, pp. 611-614
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Electron trapping and detrapping in near-interfacial traps during Fowler-Nordheim tunneling injection at 77 K
Microelectronic Engineering, Vol. 28, Núm. 1-4, pp. 317-320
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Estudio de la captura térmica por defectos en Si Y GaAs
Universidad de Granada
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Influence of negatively and positively charged scattering centers on electron mobility in semiconductor inversion layers: A Monte Carlo study
Journal of Applied Physics, Vol. 78, Núm. 3, pp. 1787-1792
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Influence of the Oxide-Charge Distribution Profile on Electron Mobility in MOSFET's
IEEE Transactions on Electron Devices, Vol. 42, Núm. 5, pp. 999-1004
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Influence of the position of deep levels on generation-recombination noise
Applied Physics Letters, Vol. 67, pp. 3581
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Introducción a la Informática
Madrid : McGraw-Hill/Interamericana de España, D.L. 1995
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Monte Carlo simulation of multiphonon capture mechanism by deep neutral impurities in Si in the presence of an electric field
Journal of Applied Physics, Vol. 78, Núm. 9, pp. 5448-5453
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Monte Carlo study of the statistics of electron capture by shallow donors in silicon at low temperatures
Physical Review B, Vol. 51, Núm. 20, pp. 14147-14151
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Multiplicación en el sistema numérico de residuos
Universidad de Granada
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Oxide charge space correlation in inversion layers. II. Three-dimensional oxide charge distribution
Semiconductor Science and Technology, Vol. 10, Núm. 5, pp. 592-600
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Universality of electron mobility curves in MOSFETs: a Monte Carlo study
IEEE Transactions on Electron Devices, Vol. 42, Núm. 2, pp. 258-265