Artículos (14) Publicaciones en las que ha participado algún/a investigador/a

2003

  1. A fast QRNS-based algorithm for the DCT and its field-programmable logic implementation

    Journal of Circuits, Systems and Computers, Vol. 12, Núm. 1, pp. 111-123

  2. Comparison Between Non-Equilibrium Green's Function and Monte Carlo Simulations for Transport in a Silicon Quantum Wire Structure

    Journal of Computational Electronics, Vol. 2, Núm. 2-4, pp. 335-339

  3. Design and implementation of RNS-based adaptive filters

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics), Vol. 2778, pp. 1135-1138

  4. Design and implementation of high-performance RNS wavelet processors using custom IC technologies

    Journal of VLSI Signal Processing Systems for Signal, Image, and Video Technology, Vol. 34, Núm. 3, pp. 227-237

  5. Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs

    Semiconductor Science and Technology, Vol. 18, Núm. 11, pp. 927-937

  6. Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration

    Journal of Applied Physics, Vol. 94, Núm. 9, pp. 5732-5741

  7. GA design of wire pre-fractal antennas and comparison with other euclidean geometries

    IEEE Antennas and Wireless Propagation Letters, Vol. 2, pp. 238-241

  8. Implementation of RNS-based distributed arithmetic discrete wavelet transform architectures using field-programmable logic

    Journal of VLSI Signal Processing Systems for Signal, Image, and Video Technology, Vol. 33, Núm. 1-2, pp. 171-190

  9. Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers

    Applied Physics Letters, Vol. 83, Núm. 15, pp. 3120-3122

  10. Monte Carlo simulation of remote-coulomb-scattering-limited mobility in metal-oxide-semiconductor transistors

    Applied Physics Letters, Vol. 82, Núm. 19, pp. 3251-3253

  11. RNS-based implementation of 8 × 8 point 2D-DCT over field-programmable devices

    Electronics Letters, Vol. 39, Núm. 1, pp. 21-23

  12. Remote Coulomb scattering in metal-oxide-semiconductor field effect transistors: Screening by electrons in the gate

    Applied Physics Letters, Vol. 83, Núm. 23, pp. 4848-4850

  13. Scattering of electrons in silicon inversion layers by remote surface roughness

    Journal of Applied Physics, Vol. 94, Núm. 1, pp. 392-399

  14. Strained-Si on Si1-xGex MOSFET mobility model

    IEEE Transactions on Electron Devices, Vol. 50, Núm. 5, pp. 1408-1411