Publicaciones en colaboración con investigadores/as de STMicroelectronics (8)

2019

  1. 3-D TCAD Study of the implications of channel width and interface states on FD-SOI Z2-FETs

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 6, pp. 2513-2519

  2. Capacitorless memory devices using virtual junctions

    19th International Workshop on Junction Technology, IWJT 2019

  3. Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells

    Solid-State Electronics, Vol. 159, pp. 12-18

  4. On the Low-Frequency Noise Characterization of Z2-FET Devices

    IEEE Access, Vol. 7, pp. 42551-42556

  5. Reliability study of thin-oxide zero-ionization, zero-swing FET 1T-DRAM memory cell

    IEEE Electron Device Letters, Vol. 40, Núm. 7, pp. 1084-1087

  6. Temperature and Gate Leakage Influence on the Z2-FET Memory Operation

    European Solid-State Device Research Conference

2018

  1. Evaluation of thin-oxide Z2-FET DRAM cell

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  2. Experimental Demonstration of Operational Z2-FET Memory Matrix

    IEEE Electron Device Letters, Vol. 39, Núm. 5, pp. 660-663