Publicaciones en las que colabora con FRANCISCO JESÚS GÁMIZ PÉREZ (83)

2013

  1. An analytical mobility model for square Gate-All-Around MOSFETs

    Solid-State Electronics, Vol. 90, pp. 18-22

  2. An in-depth Monte Carlo study of low-field mobility in ultra-thin body DGMOSFETs for modeling purposes

    Solid-State Electronics, Vol. 79, pp. 92-97

  3. An in-depth simulation study of thermal reset transitions in resistive switching memories

    Journal of Applied Physics, Vol. 114, Núm. 14

2012

  1. Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation

    Solid-State Electronics, Vol. 67, Núm. 1, pp. 30-37

2011

  1. An inversion-charge analytical model for square gate-all-around MOSFETs

    IEEE Transactions on Electron Devices, Vol. 58, Núm. 9, pp. 2854-2861

  2. Analytical drain current model reproducing advanced transport models in nanoscale double-gate (DG) MOSFETs

    2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011

  3. Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs

    Semiconductor Science and Technology, Vol. 26, Núm. 9

  4. In-depth study of quantum effects in SOI DGMOSFETs for different crystallographic orientations

    IEEE Transactions on Electron Devices, Vol. 58, Núm. 12, pp. 4438-4441

  5. Ultrathin n-Channel and p-Channel SOI MOSFETs

    Engineering Materials (Springer Science and Business Media B.V.), pp. 169-185

2010

  1. An analytical I-V model for surrounding-gate transistors that includes quantum and velocity overshoot effects

    IEEE Transactions on Electron Devices, Vol. 57, Núm. 11, pp. 2925-2933

  2. An analytical model for square GAA MOSFETs including quantum effects

    Solid-State Electronics, Vol. 54, Núm. 11, pp. 1463-1469

  3. Hole transport in DGSOI devices: Orientation and silicon thickness effects

    Solid-State Electronics, Vol. 54, Núm. 2, pp. 191-195

2009

  1. A new inversion charge centroid model for surrounding gate transistors with HfO2 as gate insulator

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Monte Carlo simulation of nanoelectronic devices

    Journal of Computational Electronics, Vol. 8, Núm. 3-4, pp. 174-191

2008

  1. A in-depth simulation study of CMOS inverters based on the novel surrounding gate transistors

    Proceedings - International Conference on Advances in Electronics and Micro-electronics, ENICS 2008

  2. Coulomb scattering in high- κ gate stack silicon-on-insulator metal-oxide-semiconductor field effect transistors

    Journal of Applied Physics, Vol. 104, Núm. 6

  3. Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 1, pp. 411-416

2007

  1. An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms

    Semiconductor Science and Technology, Vol. 22, Núm. 4, pp. 348-353

  2. Modeling of inversion layer centroid and polysilicon depletion effects on ultrathin-gate-oxide mOSFET behavior: The influence of crystallographic orientation

    IEEE Transactions on Electron Devices, Vol. 54, Núm. 4, pp. 723-732

  3. Quantum Ensemble Monte Carlo simulation of silicon-based nanodevices

    Journal of Computational Electronics, Vol. 6, Núm. 1-3, pp. 41-44