Publicaciones en las que colabora con S. Cristoloveanu (65)

2021

  1. A review of sharp-switching band-modulation devices

    Micromachines, Vol. 12, Núm. 12

  2. Improved retention characteristics of Z2-FET employing half back-gate control

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 3, pp. 1041-1044

  3. Memory Operation of Z²-FET without Selector at High Temperature

    IEEE Journal of the Electron Devices Society, Vol. 9, pp. 658-662

2020

  1. Memory Operations of Zero Impact Ionization, Zero Subthreshold Swing FET Matrix without Selectors

    IEEE Electron Device Letters, Vol. 41, Núm. 3, pp. 361-364

2019

  1. Capacitorless memory devices using virtual junctions

    19th International Workshop on Junction Technology, IWJT 2019

  2. Characteristics of band modulation FET on sub 10 nm SOI

    Japanese Journal of Applied Physics, Vol. 58, Núm. SB

  3. Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells

    Solid-State Electronics, Vol. 159, pp. 12-18

  4. Reliability study of thin-oxide zero-ionization, zero-swing FET 1T-DRAM memory cell

    IEEE Electron Device Letters, Vol. 40, Núm. 7, pp. 1084-1087

  5. Temperature and Gate Leakage Influence on the Z2-FET Memory Operation

    European Solid-State Device Research Conference

2018

  1. MSDRAM, A2RAM and Z 2 -FET performance benchmark for 1T-DRAM applications

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters

    Solid-State Electronics, Vol. 143, pp. 10-19

  3. Evaluation of thin-oxide Z2-FET DRAM cell

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  4. Experimental Demonstration of Operational Z2-FET Memory Matrix

    IEEE Electron Device Letters, Vol. 39, Núm. 5, pp. 660-663

  5. Gate-induced vs. implanted body doping impact on Z2-FET DC operation

    2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017

  6. Z2-FET memory matrix in 28 nm FDSOI technology

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

2017

  1. Extended Analysis of the Z2-FET: Operation as Capacitorless eDRAM

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 11, pp. 4486-4491

  2. Low-power Z2-FET capacitorless 1T-DRAM

    2017 IEEE 9th International Memory Workshop, IMW 2017

  3. The mystery of the Z2-FET 1T-DRAM memory

    Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

  4. Ultra-low power 1T-DRAM in FDSOI technology

    Microelectronic Engineering, Vol. 178, pp. 245-249

  5. Z2-FET as Capacitor-Less eDRAM Cell for High-Density Integration

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 12, pp. 4904-4909