Publicaciones en las que colabora con ALBERTO JOSÉ PALMA LÓPEZ (17)

2002

  1. Generation-recombination noise in highly asymmetrical p-n junctions

    Journal of Applied Physics, Vol. 92, Núm. 1, pp. 320-329

  2. Temperature dependence of generation-recombination noise in p-n junctions

    Journal De Physique. IV : JP

2001

  1. A simple subthreshold swing model for short channel MOSFETs

    Solid-State Electronics, Vol. 45, Núm. 3, pp. 391-397

  2. Contribution of injection in current noise due to generation and recombination of carriers in p-n junctions

    Journal of Applied Physics, Vol. 90, Núm. 8, pp. 3998-4006

2000

  1. Optimum design in a JFET for minimum generation-recombination noise

    Microelectronics Reliability, Vol. 40, Núm. 11, pp. 1965-1968

1997

  1. Contribution of the carrier number fluctuation and mobility fluctuation on the RTS amplitude in submicron n-MOSFETs

    Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations

  2. Estudio del ruido de baja frecuencia en transistores de efecto campo

    Universidad de Granada

  3. Gate voltage and temperature dependencies of up and down times of RTS in MOS structures: A theoretical study

    Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations

  4. Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect transistors

    Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4621-4628

  5. Influence of the doping profile and deep level trap characteristics on generation-recombination noise

    Journal of Applied Physics, Vol. 82, Núm. 7, pp. 3351-3357

  6. Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures

    Physical Review B - Condensed Matter and Materials Physics, Vol. 56, Núm. 15, pp. 9565-9574

  7. Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors

    Applied Physics Letters, Vol. 70, Núm. 16, pp. 2153-2155

1996

  1. Anomalous behaviour of the electric field in highly-compensated non-uniform semiconductors at low temperatures

    Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 99-103

  2. Capture process by shallow donors in silicon at low temperatures

    Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 105-110

1995

  1. Influence of the position of deep levels on generation-recombination noise

    Applied Physics Letters, Vol. 67, pp. 3581

  2. Monte Carlo simulation of multiphonon capture mechanism by deep neutral impurities in Si in the presence of an electric field

    Journal of Applied Physics, Vol. 78, Núm. 9, pp. 5448-5453

  3. Monte Carlo study of the statistics of electron capture by shallow donors in silicon at low temperatures

    Physical Review B, Vol. 51, Núm. 20, pp. 14147-14151