Publicaciones en las que colabora con NOEL RODRÍGUEZ SANTIAGO (16)

2018

  1. Gate-induced vs. implanted body doping impact on Z2-FET DC operation

    2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017

2015

  1. Direct characterization of impact ionization current in silicon-on-insulator body-contacted MOSFETs

    ECS Transactions

2012

  1. Combined effect of mechanical stressors and channel orientation on mobility in FDSOI n and p MOSFETs

    Proceedings - IEEE International SOI Conference

2011

  1. Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond

    Solid-State Electronics, Vol. 65-66, Núm. 1, pp. 88-93

  2. Ultrathin n-Channel and p-Channel SOI MOSFETs

    Engineering Materials (Springer Science and Business Media B.V.), pp. 169-185

2010

  1. An analytical I-V model for surrounding-gate transistors that includes quantum and velocity overshoot effects

    IEEE Transactions on Electron Devices, Vol. 57, Núm. 11, pp. 2925-2933

  2. Multi-Subband Monte Carlo simulation of bulk MOSFETs for the 32nm-node and beyond

    2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

2009

  1. Monte Carlo simulation of nanoelectronic devices

    Journal of Computational Electronics, Vol. 8, Núm. 3-4, pp. 174-191

  2. Non-metallic effects in silicided gate MOSFETs

    Solid-State Electronics, Vol. 53, Núm. 12, pp. 1313-1317

  3. Quantization effects in silicided and metal gate MOSFETs

    Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

  4. The effect of surface roughness scattering on hole mobility in double gate silicon-on-insulator devices

    Journal of Applied Physics, Vol. 106, Núm. 2

  5. Ultrathin body effects in multiple-gate SOI transistors

    ECS Transactions

2008

  1. Enhanced electron transport by carrier overshoot in ultrascaled Double Gate MOSFETs

    ULIS 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON

  2. Enhanced electron transport by carrier overshoot in ultrascaled double gate MOSFETs

    ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon

  3. Monte Carlo simulation of low-field mobility in strained double gate SOI transistors

    Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 205-208

2006

  1. Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers

    Applied Physics Letters, Vol. 88, Núm. 12