FRANCISCO JESÚS
GÁMIZ PÉREZ
CATEDRÁTICO DE UNIVERSIDAD
JOSÉ LUIS
PADILLA DE LA TORRE
PROFESOR TITULAR DE UNIVERSIDAD
Publicaciones en las que colabora con JOSÉ LUIS PADILLA DE LA TORRE (42)
2023
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3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology
Solid-State Electronics, Vol. 200
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Description of Gate-to-Channel Tunneling Leakage Mechanism in a 2D Monte Carlo Simulator
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2022
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Analysis of the Reformulated Source to Drain Tunneling Probability for Improving the Accuracy of a Multisubband Ensemble Monte Carlo Simulator
Micromachines, Vol. 13, Núm. 4
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DFT-based layered dielectric model of few-layer MoS2
Solid-State Electronics, Vol. 194
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Performance of FDSOI double-gate dual-doped reconfigurable FETs
Solid-State Electronics, Vol. 194
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Towards a DFT-based layered model for TCAD simulations of MoS2
Solid-State Electronics, Vol. 197
2021
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Self-consistent enhanced s/d tunneling implementation in a 2d ms-emc nanodevice simulator
Micromachines, Vol. 12, Núm. 6
2020
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Detección de la COVID-19 con biosensores basados en transistores de grafeno
Boletín del Grupo Español del Carbón, Núm. 57, pp. 16-25
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Efficient Implementation of S/D tunneling in 2D MS-EMC of Nanoelectronic Devices including the Thickness Dependent Effective Mass
2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020
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Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
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Quantum enhancement of a s/d tunneling model in a 2d ms-emc nanodevice simulator: NEGF comparison and impact of effective mass variation
Micromachines, Vol. 11, Núm. 2
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Techniques for Statistical Enhancement in a 2D Multi-subband Ensemble Monte Carlo Nanodevice Simulator
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
2019
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3-D TCAD Study of the implications of channel width and interface states on FD-SOI Z2-FETs
IEEE Transactions on Electron Devices, Vol. 66, Núm. 6, pp. 2513-2519
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Impact of effective mass on transport properties and direct source-to-drain tunneling in ultrascaled double gate devices: A 2D multi-subband ensemble monte carlo study
2019 IEEE 14th Nanotechnology Materials and Devices Conference, NMDC 2019
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Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
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Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices
IEEE Transactions on Electron Devices, Vol. 66, Núm. 3, pp. 1145-1152
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On the Low-Frequency Noise Characterization of Z2-FET Devices
IEEE Access, Vol. 7, pp. 42551-42556
2018
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Analysis of the heterogate electron-hole bilayer tunneling field-effect transistor with partially doped channels: Effects on tunneling distance modulation and occupancy probabilities
IEEE Transactions on Electron Devices, Vol. 65, Núm. 1, pp. 339-346
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Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor
Applied Physics Letters, Vol. 112, Núm. 18
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Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor
IEEE Transactions on Electron Devices, Vol. 65, Núm. 10, pp. 4679-4686