FRANCISCO JESÚS
GÁMIZ PÉREZ
CATEDRÁTICO DE UNIVERSIDAD
Publications (393) FRANCISCO JESÚS GÁMIZ PÉREZ publications
2024
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High enhancement of sensitivity and reproducibility in label-free SARS-CoV-2 detection with graphene field-effect transistor sensors through precise surface biofunctionalization control
Biosensors and Bioelectronics, Vol. 250
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Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications
Micromachines, Vol. 15, Núm. 1
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Low-Frequency Noise in InGaAs-OI Transistors
IEEE Transactions on Electron Devices
2023
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3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology
Solid-State Electronics, Vol. 200
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Description of Gate-to-Channel Tunneling Leakage Mechanism in a 2D Monte Carlo Simulator
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Editorial to Letters from SISPAD-2022
Solid-State Electronics
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Experimental analysis of variability in WS2-based devices for hardware security
Solid-State Electronics, Vol. 207
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Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications
Micromachines, Vol. 14, Núm. 5
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Liquid-gate 2D material-on-insulator transistors for sensing applications
Solid-State Electronics, Vol. 207
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Low-Frequency Noise in InGaAs-OI 1T-DRAMs
2023 International Conference on Noise and Fluctuations, ICNF 2023
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Simulation of BioGFET sensors using TCAD
Solid-State Electronics, Vol. 208
2022
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Analysis of the Reformulated Source to Drain Tunneling Probability for Improving the Accuracy of a Multisubband Ensemble Monte Carlo Simulator
Micromachines, Vol. 13, Núm. 4
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DFT-based layered dielectric model of few-layer MoS2
Solid-State Electronics, Vol. 194
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Improved inter-device variability in graphene liquid gate sensors by laser treatment
Solid-State Electronics, Vol. 192
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Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact
IEEE Access, Vol. 10, pp. 47169-47178
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Performance of FDSOI double-gate dual-doped reconfigurable FETs
Solid-State Electronics, Vol. 194
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Towards a DFT-based layered model for TCAD simulations of MoS2
Solid-State Electronics, Vol. 197
2021
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A review of sharp-switching band-modulation devices
Micromachines, Vol. 12, Núm. 12
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Hysteresis in as-synthesized mos2 transistors: Origin and sensing perspectives
Micromachines, Vol. 12, Núm. 6
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Improved inter-device variability in graphene liquid gate sensors by laser treatment
2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021