Publicaciones (391) Publicaciones de FRANCISCO JESÚS GÁMIZ PÉREZ

2024

  1. High enhancement of sensitivity and reproducibility in label-free SARS-CoV-2 detection with graphene field-effect transistor sensors through precise surface biofunctionalization control

    Biosensors and Bioelectronics, Vol. 250

  2. Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

    Micromachines, Vol. 15, Núm. 1

2023

  1. 3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology

    Solid-State Electronics, Vol. 200

  2. Description of Gate-to-Channel Tunneling Leakage Mechanism in a 2D Monte Carlo Simulator

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. Editorial to Letters from SISPAD-2022

    Solid-State Electronics

  4. Experimental analysis of variability in WS2-based devices for hardware security

    Solid-State Electronics, Vol. 207

  5. Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications

    Micromachines, Vol. 14, Núm. 5

  6. Liquid-gate 2D material-on-insulator transistors for sensing applications

    Solid-State Electronics, Vol. 207

  7. Simulation of BioGFET sensors using TCAD

    Solid-State Electronics, Vol. 208

2022

  1. Analysis of the Reformulated Source to Drain Tunneling Probability for Improving the Accuracy of a Multisubband Ensemble Monte Carlo Simulator

    Micromachines, Vol. 13, Núm. 4

  2. DFT-based layered dielectric model of few-layer MoS2

    Solid-State Electronics, Vol. 194

  3. Improved inter-device variability in graphene liquid gate sensors by laser treatment

    Solid-State Electronics, Vol. 192

  4. Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact

    IEEE Access, Vol. 10, pp. 47169-47178

  5. Performance of FDSOI double-gate dual-doped reconfigurable FETs

    Solid-State Electronics, Vol. 194

  6. Towards a DFT-based layered model for TCAD simulations of MoS2

    Solid-State Electronics, Vol. 197

2021

  1. A review of sharp-switching band-modulation devices

    Micromachines, Vol. 12, Núm. 12

  2. Hysteresis in as-synthesized mos2 transistors: Origin and sensing perspectives

    Micromachines, Vol. 12, Núm. 6

  3. Improved inter-device variability in graphene liquid gate sensors by laser treatment

    2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021

  4. Improved retention characteristics of Z2-FET employing half back-gate control

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 3, pp. 1041-1044

  5. Memory Operation of Z²-FET without Selector at High Temperature

    IEEE Journal of the Electron Devices Society, Vol. 9, pp. 658-662