ISABEL MARÍA
TIENDA LUNA
PROFESORA TITULAR DE UNIVERSIDAD
Publications (46) Publications de ISABEL MARÍA TIENDA LUNA
2019
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Memcapacitor emulator based on the Miller effect
International Journal of Circuit Theory and Applications, Vol. 47, Núm. 4, pp. 572-579
2018
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A Bayesian framework for the inference of gene regulatory networks from time and pseudo-time series data
Bioinformatics, Vol. 34, Núm. 6, pp. 964-970
2016
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On the influence of the back-gate bias on InGaAs Trigate MOSFETs
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
2015
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Analytic Potential and Charge Model of Semiconductor Quantum Wells
IEEE Transactions on Electron Devices, Vol. 62, Núm. 12, pp. 4186-4191
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Impact of the back-gate biasing on trigate MOSFET electron mobility
IEEE Transactions on Electron Devices, Vol. 62, Núm. 1, pp. 224-227
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Mobility and capacitance comparison in scaled InGaAs versus Si trigate MOSFETs
IEEE Electron Device Letters, Vol. 36, Núm. 2, pp. 114-116
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The unexpected beneficial effect of the L -valley population on the electron mobility of GaAs nanowires
Applied Physics Letters, Vol. 106, Núm. 2
2014
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Analytical model for the threshold voltage of III-V nanowire transistors including quantum effects
Solid-State Electronics, Vol. 92, pp. 28-34
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Microarray time series modeling and variational Bayesian method for reverse engineering gene regulatory networks
Lecture Notes of the Institute for Computer Sciences, Social-Informatics and Telecommunications Engineering, LNICST, Vol. 117, pp. 70-75
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Pseudo-Boltzmann model for modeling the junctionless transistors
Solid-State Electronics, Vol. 95, pp. 19-22
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Size-dependent electron mobility in InAs nanowires
European Solid-State Device Research Conference
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Theoretical interpretation of the electron mobility behavior in InAs nanowires
Journal of Applied Physics, Vol. 116, Núm. 17
2013
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An analytical mobility model for square Gate-All-Around MOSFETs
Solid-State Electronics, Vol. 90, pp. 18-22
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Analytical gate capacitance modeling of III-V nanowire transistors
IEEE Transactions on Electron Devices, Vol. 60, Núm. 5, pp. 1590-1599
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Bayesian sparse factor model for transcriptional regulatory networks inference
European Signal Processing Conference
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Effect of confined acoustic phonons on the electron mobility of rectangular nanowires
Applied Physics Letters, Vol. 103, Núm. 16
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Influence of the back-gate bias on the electron mobility of trigate MOSFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2012
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Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors
Journal of Applied Physics, Vol. 112, Núm. 8
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Basis-expansion factor models for uncovering transcription factor regulatory network
2012 IEEE Statistical Signal Processing Workshop, SSP 2012
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Effect of interfacial states on the technological variability of trigate MOSFETs
2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012