JOSÉ LUIS
PADILLA DE LA TORRE
PROFESOR TITULAR DE UNIVERSIDAD
École Polytechnique Fédérale de Lausanne
Lausana, SuizaPublications in collaboration with researchers from École Polytechnique Fédérale de Lausanne (36)
2018
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Analysis of the heterogate electron-hole bilayer tunneling field-effect transistor with partially doped channels: Effects on tunneling distance modulation and occupancy probabilities
IEEE Transactions on Electron Devices, Vol. 65, Núm. 1, pp. 339-346
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Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor
Applied Physics Letters, Vol. 112, Núm. 18
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Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor
IEEE Transactions on Electron Devices, Vol. 65, Núm. 10, pp. 4679-4686
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Impact of electron effective mass variation on the performance of InAs/GaSb Electron-Hole Bilayer Tunneling Field-Effect Transistor
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
2017
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A novel reconfigurable sub-0.25-V digital logic family using the electron-hole bilayer TFET
IEEE Journal of the Electron Devices Society, Vol. 6, Núm. 1, pp. 2-7
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Circularly polarised broadband planar lightweight reflectarray with eligible pattern for satellite communications in Ku-band
IET Microwaves, Antennas and Propagation, Vol. 11, Núm. 4, pp. 513-518
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Electromagnetic Near-Field Inhomogeneity Reduction for Image Acquisition Optimization in High-Resolution Multi-Channel Magnetic Resonance Imaging (MRI) Systems
IEEE Access, Vol. 5, pp. 5149-5157
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Further on ‘broadband electronically tunable reflection-based phase shifter for active-steering microwave reflectarray systems in Ku-Band’: prototype validation
Journal of Electromagnetic Waves and Applications, Vol. 31, Núm. 4, pp. 427-432
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Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs
IEEE Transactions on Electron Devices, Vol. 64, Núm. 8, pp. 3084-3091
2016
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Assessment of confinement-induced band-To-band tunneling leakage in the FinEHBTFET
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
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Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor
Journal of Applied Physics, Vol. 119, Núm. 4
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Broadband electronically tunable reflection-based phase shifter for active-steering microwave reflectarray systems in ku-band
Journal of Electromagnetic Waves and Applications, Vol. 30, Núm. 12, pp. 1545-1551
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Broadband planar multilayered reflectarray based on circular stacked patches and reflective printed circuits for microwave communication systems
Journal of Electromagnetic Waves and Applications, Vol. 30, Núm. 17, pp. 2344-2353
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Electronically Reconfigurable Reflective Phase Shifter for Circularly Polarized Reflectarray Systems
IEEE Microwave and Wireless Components Letters, Vol. 26, Núm. 9, pp. 705-707
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Impact of device geometry of the fin Electron-Hole Bilayer Tunnel FET
European Solid-State Device Research Conference
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Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor
IEEE Transactions on Electron Devices, Vol. 63, Núm. 8, pp. 3320-3326
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Switching Behavior Constraint in the Heterogate Electron-Hole Bilayer Tunnel FET: The Combined Interplay between Quantum Confinement Effects and Asymmetric Configurations
IEEE Transactions on Electron Devices, Vol. 63, Núm. 6, pp. 2570-2576
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The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization
IEEE Transactions on Electron Devices, Vol. 63, Núm. 6, pp. 2603-2609
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Underlap counterdoping as an efficient means to suppress lateral leakage in the electron-hole bilayer tunnel FET
Semiconductor Science and Technology, Vol. 31, Núm. 4
2015
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Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor
Applied Physics Letters, Vol. 106, Núm. 26